Question 41 : In the p & n regions of the p-n junction the _________ & the ___________ are the majority charge carriers respectively.
1. holes, holes
2. electrons, electrons
3. holes, electrons
4. electrons, holes
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Question 42 : In a Schottky diode, the silicon layer acts as a _____________
1. anode
2. cathode
3. gate
4. common terminal
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Question 43 : When a physical contact between a p-region & n-region is established which of the following is most likely to take place?
1. Electrons from N-region diffuse to P-region
2. Holes from P-region diffuse to N-region
3. Both of the above mentioned statements are true
4. Nothing will happen
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Question 44 : In case of a practical p-n junction diode, the rise in the junction temperature ___________
1. decreases the width of the depletion region
2. increases the barrier potential
3. increases the width of the depletion region
4. width of the depletion region increases but the barrier potential remains constant
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Question 45 : In order to reduce the reverse recovery time of the diodes, __________ is carried out.
1. shortening of the length of the device
2. platinum & gold doping
3. antimony doping
4. adding an extra silicon layer
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Question 46 : In the p & n regions of the p-n junction the _________ & the ___________ are the minority charge carriers respectively.
1. holes, holes
2. electrons, electrons
3. holes, electrons
4. electrons, holes
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Question 47 : Even after the forward current reduces to zero value, a practical diode continues to conduct in the reverse direction for a while due to the
1. resistance of the diode
2. high junction temperature
3. stored charges in the depletion region
4. none of the mentioned
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Question 48 : A diode is said to be forward biased when the
1. cathode is positive with respect to the anode
2. anode is positive with respect to the cathode
3. anode is negative with respect to the anode
4. both cathode & anode are positive
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